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This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
CHECKED
DATE
No t
NAME
CHECKED Aug.-06-'04 O. Ikawa
D R A W N Aug.-06-'04 K. Komatsu
K. Yamada Device Name Type Name Spec. No.
eco r
: : :
APPROVED
SPECIFICATION
MS6M00819
7MBR20UF060
Power Integrated Module
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Fuji Electric Device Technology Co.,Ltd.
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Revised Records
Date Classification Ind. Content Applied date Issued date
Revised outline drawing (P3/16) Added the note (P4/16) Revised VCE(sat),VF (P6/16) Revised warning (P14/16)
Drawn
Checked
Checked Approved
Aug.-06-' 04 Enactment
O. Ikawa K. Yamada
Y. Seki
Dec.-16-'04
Revision
a
K. Komatsu O. Ikawa K. Yamada Y. Seki
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
No
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Fuji Electric Device Technology Co.,Ltd.
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This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
1. Outline Drawing ( Unit : mm )
7MBR20UF060 Specification
o
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
df n ne r de w
me on PCB with 1.70.3mm thickness a Module only designed for mounting com re 2. Equivalent circuit t No
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a
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
4. Drilling layout for PCB
3. Pin positions with torerance ( Unit : mm )
No t eco r me m
o
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
df n ne r de w
Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
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5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage
Inverter
Symbols VCES VGES Ic
Conditions
Maximum Ratings 600 20 Tc=65oC Tc=25oC Tc=65oC Tc=25oC Tc=65oC 20 25 40 50 20 78 600 20
Units V V A A A W V V A A W A A A2s
o o
Continuous 1ms Continuous 1 device
Collector current
Icp -Ic
Collector Power Dissipation Collector-Emitter voltage Gate-Emitter voltage
Brake
Pc VCES VGES Ic
Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150oC,10ms half sine wave
Tc=65 C Tc=25 C
o
o
15 19 30 28 76 20 210 221 150
Collector current
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
Icp Pc Io IFSM It Tj Tstg Viso
2
Tc=65oC Tc=25 C
o
Collector Power Dissipation
Converter
Average Output Current Surge Current (Non-Repetitive) It
2
(Non-Repetitive)
Junction temperature Storage temperature Isolation voltage between terminal and baseplate(*1) between thermistor and others
(*2)
AC : 1min.
Mounting Screw Torque M4 (*1) All terminals should be connected together when isolation test will be done. (*2) Terminal T1 and T2 should be connected together. And another terminals should be connected together and shorted to baseplate.
No
t
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sig de
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C C
-40~ +125 2500 2500 1.31.7
V V N.m
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6. Electrical characteristics ( at Tj= 25oC unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter
Symbols ICES IGES VGE(th) VGE = VCE = VCE =
Conditions 0 V, VCE = 600 V 0 V, VGE = 20 V 20 V, Ic = Tj=25 15 V, Tj=125 20 A Tj=25 Tj=125 0 V, VCE = 1 MHz 300 V 20 A 15 V 150 Tj=25 Tj=125 Tj=25 Tj=125 IF = VGE = VCE = VCE = 20 A 0 V, VCE = 600 V 0 V, VGE = 20 V 20 V, Ic = Tj=25 15 A Tj=25 0 V, VCE = 1 MHz 8 mA 10 V 15 mA
Characteristics min. typ. Max. 4.5 4.5 4750 3305 6.0 1.95 1.85 1500 0.35 0.12 0.08 0.40 0.05 1.70 1.60 1.0 200 7.5 2.45 2.35 1.2 0.6 1.0 0.35 2.10 2.00 300 1.0 200 7.5
Units mA nA V
VCE(sat) Terminal VGE = VCE(sat) Chip Ic = VGE = f= Vcc= Ic = VGE = RG =
2.35 a 2.85 a 2.25 a 2.75 a
V
Input capacitance Turn-on time
Cies ton tr tr(i)
pF
s
Turn-off time
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
toff tf VF (Terminal) VF (Chip)
Forward on voltage
IF =
20 A
1.75 a 2.15 a 1.65 a 2.05 a
V
Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
trr ICES IGES VGE(th)
ns mA nA V
VCE(sat) Terminal VGE = VCE(sat) Chip Ic =
15 V, Tj=125 Tj=125
Brake
Input capacitance Turn-on time Turn-off time
Cies
Reverse recovery time Reverse current
Converter
No
tr
com e
ton tr tf trr toff
en m
Ic = IF =
VGE = f= Vcc= VGE = RG = VR = IF = VR =
o df
ne r
wd
10 V
sig e
6.0
n.
2.10 2.00 900 0.43 0.18 0.40 0.05 1.1 1.2 -
2.60 a 2.50 a 1.2 0.6 1.0 0.35 350 1.00 1.5 1.0 5250 3450 K mA W ns mA V s V
2.50 a 3.00 a 2.40 a 2.90 a
pF
300 V 15 A 15 V 270 15 A 600 V 20 A chip terminal 800 V
o
IRRM VFM IRRM R B
Forward on voltage Reverse current Resistance B value
Thermistor
T = 25 C T =100oC T = 25/50oC
5000 495 3375
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7. Thermal resistance characteristics
Items Thermal resistance (1 device) Rth(j-c) Symbols Conditions Inverter IGBT Inverter FWD Brake IGBT Brake diode Converter Diode Contact Thermal resistance Rth(c-f) with Thermal Compound (*) Characteristics min. typ. Max. 0.50 1.65 1.76 1.99 2.04 1.56 o o
Units
C/W
C/W
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
8. Indication on module
Serial No. 7MBR20UF060 20A 600V
U. K.

Lot. No.
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
9. Applicable category This specification is applied to Power Integrated Module named 7MBR20UF060. 10. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals.
o d ftransporting. Do not drop or otherwise shock the modules when en m om 11. Definitions of switching time rec t No
0V
L
ne r
de w
n sig
.

90%
0V
V GE
trr
Vcc
90%

VCE
Irr
Ic
90%
RG VGE
VCE Ic
0V 0A
tr(i) tr ton toff

Ic
10%
10%
VCE tf
10%
12. Packing and Labeling Display on the packing box Logo of production Type name Lot. No. Products quantitiy in a packing box
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Reliability Test Items
Test categories Reference AcceptNumber norms ance EIAJ ED-4701 of sample number 5 5 (0:1) (0:1)
Test items
Test methods and conditions
(Aug.-2001 edition)
1 Terminal Strength (Pull test) 2 Mounting Strength
Mechanical Tests
Pull force Test time Screw torque Test time
: : : :
10N 101 sec. 1.3 ~ 1.7 Nm (M4) 101 sec.
Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
Environment Tests
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Temperature Cycle
Range of frequency : 0.1 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 3 hr. (1hr./direction) Maximum acceleration : 9800m/s 2 Pulse width : 0.5msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : Low temp. -405 High temp. 125 5 RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
5
(0:1)
Test Method 404 Condition code D
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Dwell time Number of cycles 5 Thermal Shock Test temp.
No
t
com re
Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles
en m
o df
ne r
+0 -5
de w
n sig
.
5 (0:1)
Test Method 307 method
+5 -0
Condition code A
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Reliability Test Items
Test categories Reference AcceptNumber norms ance EIAJ ED-4701 of sample number (Aug.-2001 edition)
Test Method 101
Test items
Test methods and conditions
1 High temperature Reverse Bias
5
(0:1)
Test temp. Bias Voltage Bias Method Test duration
: Ta = 1255 (Tj ) 150 : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr.
Test Method 101
Endurance Tests
2 High temperature Bias (for gate)
5
(0:1)
Test temp. Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
3 Intermitted Operating Life (Power cycle) ( for IGBT )
: Ta = 1255 (Tj ) 150 : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : 2 sec. : 18 sec. : Tj=1005 deg Tj , Ta=255 150 : 8500 cycles
Test Method 106
5
P<1%
Failure Criteria
Item Characteristic Symbol ICES IGES
Electrical Leakage current characteristic
No
Visual inspection
t
Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual inspection Peeling Plating and the others
eco r
me m
df n
Failure criteria Unit Lower limit Upper limit USLx2 USLx2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 USLx1.2 mA A mA V V mV mV -
o
ne r
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n sig
Note
.
LSLx0.8 -
Broken insulation The visual sample
LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
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Reliability Test Results
Test categories Reference norms EIAJ ED-4701
(Aug.-2001 edition)
Test items
Number Number of test of failure sample sample 5 5 5 5 5 5 5 5 0 0 0 0 0 0 0
1 Terminal Strength
Test Method 401 Method Test Method 402 method
Mechanical Tests
(Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage
Test Method 403 Condition code B Test Method 404 Condition code B Test Method 201
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
Environment Tests
2 Low Temperature Storage 3 Temperature Humidity Storage 4 Temperature Cycle 5 Thermal Shock
Test Method 202
Test Method 103 Test code C Test Method 105
Test Method 307
Endurance Tests
df 1 High temperature Reverse Bias en m om 2 High temperature Bias re) c t ( for gate No 3 Intermitted Operating Life
(Power cycling) ( for IGBT )
o
Condition code A Test Method 101
ne r
de5 w
5 5 5
. gn0 si
0 0 0 0
method
Test Method 101
Test Method 106
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[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.) / chip 50 50
o
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125oC (typ.) / chip
40
Collector current : Ic [ A ]
VGE=20V 15V 13V 11V
VGE=20V 15V 13V 40
Collector current : Ic [ A ]
11V
30
30
20 9V 10
20 9V
10
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip 50 10 Tj=25 oC 40
Collector current : Ic [ A ]
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25oC (typ.) / chip
Collector - Emitter voltage : VCE [ V ]
Tj=125 oC
8
30
6
20
4
10
0 0 1 2 3 4
Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.)
N
VGE=0V, f= 1MHz, Tj= 25 oC
ot
com re
en m
5 Cies
o df
ne r
2
de w
10
n sig
15
.
Ic=40A 20A 10A 20
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=15A, Tj= 25 oC 500 25
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]
1000
400
20
Gate - Emitter voltage : VGE [ V ]
300
15
Coes 100
200
10
100
5
Cres
0
0 5 10 15 20 25 30 35
0
20
40
60
80
100
0 120
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
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[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=150 Tj= 25 C , 1000 1000
o
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=150 Tj= 125oC ,
Switching time : ton, tr, toff, tf [ nsec ]
toff ton tr
Switching time : ton, tr, toff, tf [ nsec ]
toff ton
100
100
tr
tf
tf
10 10 20 30 40
10 10 20 30 40
Collector current : Ic [ A ]
Collector current : Ic [ A ]
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=20A, VGE=+-15V, Tj= 25 oC 2.5 toff ton
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=150 Eon 125
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
1000
Switching time : ton, tr, toff, tf [ nsec ]
2
1.5
100
tr tf
1
0.5
10 60 80 100 300 Gate resistance : Rg [ ]
500
[ Inverter ] Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=20A, VGE=+-15V, Tj= 125 oC 1.1 60
N
ot
com re
me
df n
o
ne r
0 0
des w
10 20
. gn i
30
Eoff 125 Eoff 25 Eon 25
Err 125 Err 25
40
50
Collector current : Ic [ A ]
[ Inverter ] Reverse bias safe operating area (max) +VGE=15V, -VGE<=15V, Rg=>150 Tj<=125oC ,
Switching loss : Eon, Eoff, Err [ mJ / pulse ]
1
Eoff
50
Collector current : Ic [ A ]
0.9
40
0.8
0.7 Eon
30
0.6
20
0.5 Err 0.4
10
0 60 80 100 300 500 0 200 400 600 800
Gate resistance : Rg [ ]
Collector - Emitter voltage : VCE [ V ]
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[ Inverter ] Forward current vs. Forward on voltage (typ.) / chip
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=150
40 Tj=25 oC
Forward current : IF [ A ]
Tj=125 oC
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
trr 125 100 trr 25
30
20
Irr 125 Irr 25
10
0 0 1 2 Forward on voltage : VF [ V ] 3 4
10 0 10 20 30 40 50
Forward current : IF [ A ]
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
[ Converter ] Forward current vs. Forward on voltage (typ.) / chip
40 Tj=25 oC
Forward current : IF [ A ]
Tj=125 oC
30
20
10
0 0 0.5 1
1.5
Forward on voltage : VFM [ V ]
10
t No
Transient thermal resistance (max.)
eco r
me m
2
df n
o
ne r
de w
n sig
.
[ Thermistor ] Temperature characteristic (typ.)
100
Thermal resistanse : Rth(j-c) [ oC / W ]
Resistance : R [ ]
1
FWD [Brake] IGBT [Brake] FWD [inverter] IGBT [inverter] CONV.Diode
10
1
0.1 0.001
0.01
0.1 Pulse width : Pw [ sec ]
1
10
0.1 -50
0
50
100
150
200
Temperature [ oC ]
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[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.) / chip 40 40
o
[Brake] Collector current vs. Collector-Emitter voltage Tj= 125oC (typ.) / chip
VGE=20V 15V 13V 30
Collector current : Ic [ A ]
11V
Collector current : Ic [ A ]
VGE=20V 30
15V
13V
11V 20
20
9V 10
9V 10
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip 40 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25oC (typ.) / chip
Tj=25 oC 30
Collector current : Ic [ A ]
Tj=125 oC
Collector - Emitter voltage : VCE [ V ]
8
6
20
4
10
0 0 1 2 3
Collector - Emitter voltage : VCE [ V ]
[Brake] Capacitance vs. Collector-Emitter voltage (typ.)
10
4
N
VGE=0V, f= 1MHz, Tj= 25 oC
ot
eco r
mm
4
en
5
for d
0
2
ne
10
de w
12 14
n sig
16
.
Ic=30A 15A 7.5A
8
18
20
22
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=8A, Tj= 25 oC 500 25
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]
400
20
Gate - Emitter voltage : VGE [ V ]
1000
Cies
300
15
200
10
100
Coes
Cres
100
5
10 0 5 10 15 20 25 30 35
0 0 10 20 30 40 50 60 70
0
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
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Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - When electric power is connected to equipments, rush current will be flown through rectifying diode to charge DC capacitor. Guaranteed value of the rush current is specified as I2t (non-repetitive), however frequent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. In application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary.
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
I2 t()I2 t - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. - Power cycle capability is classified to delta-Tj mode and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. TjTc(Tc)
a Please refer to mounting instructions (Technical Rep. No. : MT5F14628a) when you mount this product.
Mounting Instructions (No. MT5F14628a) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 50um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm50um10um
No
t
eco r
me m
df n
o
ne r
de w
n sig
.
- In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA
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- If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE
This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd.
- Control the surge voltage by adding a protection circuit (=snubber circuit) to the IGBT. Use a film capacitor
in the snubber circuit, and then set it near the IGBT in order to bipass high frequency surge currents.
IGBT(=) IGBT
Cautions
- Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability.
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If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
DWG.NO.
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Fuji Electric Device Technology Co.,Ltd.
MS6M00819
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